copyright@ semipower electronic technology co., ltd. all rights reserved. features high ruggedness r ds( on ) (max 5.3m ? )@v gs =10v gate charge ( typ 146 nc) improved dv/dt capability 100% avalanche tested general description this n - channel enhancement mode field - effect power transistor using samwin semiconductors advanced planar stripe, dmos technology intended for battery operated systems like a dc - dc converter motor control , ups ,audio amplifier. also, especially designed to minimize r ds(on) , low gate charge and high rugged avalanche characteristics. n - channel mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 30 v i d continuous drain current 100 a i dm drain current pulsed (note 1) 400 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 875 mj p d total power dissipation (@t c =25 o c) 100 w derating factor above 25 o c 0.67 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit min. typ. max. r thjc thermal resistance, junction to case 1.5 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 62.5 o c /w jun. 2011. rev. 2.0 1/5 bv dss : 30v i d : 100a r ds(on) : 5.3 m? 1 2 3 1. gate 2. drain 3. source 1 2 3 to - 220 sw100n03 samwin item sales type marking package packaging 1 sw p 100n03 sw100n03 to - 220 tube 2 sw i 100n03 sw100n03 to - 251 tube 3 sw d 100n03 sw100n03 to - 252 reel 4 sw b 100n03 sw100n03 to - 263 reel order codes to - 263 to - 251 to - 252 1 2 3 1 2 3 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 30 - - v i dss drain to source leakage current v ds =30v, v gs =0v - - 1 ua v ds =24v, t c =125 o c - - 100 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v - - 100 na v gs = - 20v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.0 - 3.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 50a - 4.2 5.3 m? dynamic characteristics c iss input capacitance v gs =0v, v ds =15v, f=1mhz - 9500 - pf c oss output capacitance - 800 - c rss reverse transfer capacitance - 300 - t d(on) turn on delay time v ds =15v, i d =1a, r g =6? ,vgs=10v - 25.7 50 ns tr rising time - 10 20 t d(off) turn off delay time - 128 200 t f fall time - 34 70 q g total gate charge v ds =15v, v gs =5v, i d = 16 a - 50 65 nc q gs gate - source charge - 20.8 - q gd gate - drain charge - 19 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 90 a v sd diode forward voltage drop. i s =110a, v gs =0v - - 1.5 v . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 200uh, i as = 110a, v dd = 25v, r g =25?, starting t j = 25 o c 3. i sd 110a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. samwin 2/5 sw100n03
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. output characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation with temperature fig. 5. gate - charge characteristics fig. 6. capacitance characteristics fig. 4. gate threshold variation with temperature 3/5 samwin sw100n03
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 8. maximum safe operating area fig. 9. normalized thermal transient impedance curve fig 7. body - diode characteristics samwin 4/5 sw100n03 fig.10. test circuit and waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2010.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.06.02 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 5/5 sw100n03
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